tsop22..iv1 document number 82207 rev. 1.2, 31-jan-05 vishay semiconductors www.vishay.com 1 17274 1 2 3 ir receiver modules for remote control systems description the tsop22..iv1 - series are miniaturized receivers for infrared remote contro l systems. pin diode and preamplifier are assembled on lead frame, the epoxy package is designed as ir filter. the demodulated output signal can directly be decoded by a microprocessor. tsop22..iv1 is the standard ir remote control receiver series, support- ing all major transmission codes. features ? photo detector and preamplifier in one package internal filter for pcm frequency improved shielding against electrical field disturbance ttl and cmos compatibility output active low low power consumption special features improved immunity against ambient light suitable burst length 10 cycles/burst mechanical data pinning: 1 = out, 2 = v s , 3 = gnd parts table block diagram application circuit part carrier frequency tsop2230iv1 30 khz tsop2233iv1 33 khz tsop2236iv1 36 khz tsop2237iv1 36.7 khz TSOP2238IV1 38 khz tsop2240iv1 40 khz tsop2256iv1 56 khz 30 k ? 2 3 1 v s out demo- gnd pass agc input pin band dulator control circuit 16835 c 1 = 4.7 f tsopxxxx out gnd circuit c r 1 =100 ? +v s gnd transmitter with tsalxxxx v s r 1 +c 1 recommended to suppress power supply disturbances. v o the output voltage should not be hold continuously at a voltage below v o = 3.3 v by the external circuit. 16842 e3
www.vishay.com 2 document number 82207 rev. 1.2, 31-jan-05 tsop22..iv1 vishay semiconductors absolute maximum ratings absolute maximum ratings t amb = 25 c, unless otherwise specified electrical and opti cal characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol value unit supply voltage (pin 2) v s - 0.3 to + 6.0 v supply current (pin 2) i s 5ma output voltage (pin 1) v o - 0.3 to + 6.0 v output current (pin 1) i o 5ma junction temperature t j 100 c storage temperature range t stg - 25 to + 85 c operating temperature range t amb - 25 to + 85 c power consumption (t amb 85 c) p tot 50 mw soldering temperature t 5 s, 1 mm from case t sd 260 c parameter test condition symbol min ty p. max unit supply current (pin 2) v s = 5 v, e v = 0 i sd 0.8 1.2 1.5 ma v s = 5 v, e v = 40 klx, sunlight i sh 1.5 ma supply voltage (pin 2) v s 4.5 5.5 v transmission distance e v = 0, test signal see fig.1, ir diode tsal6200, i f = 250 ma d35m output voltage low (pin 1) i ol = 0.5 ma, e e = 0.7 mw/m 2 , f = f o , test signal see fig. 1 v ol 250 mv minimum irradiance (30 - 40 khz) pulse width tolerance: t pi - 5/f o < t po < t pi + 6/f o , test signal see fig.1 e e min 0.2 0.4 mw/m 2 minimum irradiance (56 khz) pulse width tolerance: t pi -5/f o < t po < t pi +6/f o , test signal see fig.1 e e min 0.3 0.5 mw/m 2 maximum irradiance t pi - 5/f o < t po < t pi + 6/f o , test signal see fig. 1 e e max 30 w/m 2 directivity angle of half transmission distance ? 1/2 45 deg
tsop22..iv1 document number 82207 rev. 1.2, 31-jan-05 vishay semiconductors www.vishay.com 3 typical characteris tics (tamb = 25 c unless otherwise specified) figure 1. output function figure 2. pulse length and sens itivity in dark ambient figure 3. output function e e t t pi * t * t pi 10/fo is recommended for optimal function v o v oh v ol t 16110 optical test signal (ir diode tsal6200, i f = 0.4 a, 30 pulses, f = f 0 , t = 10 ms) output signal t d 1) t po 2) 1) 7/f 0 < t d < 15/f 0 2) t pi C5/f 0 < t po < t pi +6/f 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1.0 10.0 100.0 1000.010000.0 e e C irradiance ( mw/m 2 ) 16908 input burst duration = 950 nm, optical test signal, fig.1 output pulse t C output pulse width ( ms ) po e e t v o v oh v ol t 600 s 600 s t = 60 ms t on t off 94 8134 optical t est signal output signal , ( see fig.4 ) figure 4. output pulse diagram figure 5. frequency dependence of responsivity figure 6. sensitivity in bright ambient t ,t C output pulse width ( ms ) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1.0 10.0 100.0 1000.010000.0 e e C irradiance ( mw/m 2 ) 16909 to ff = 950 nm, optical test signal, fig.3 to n on off 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.7 0.9 1.1 1.3 f/f 0 C relative frequency 16925 f = f 0 5% f ( 3db ) = f 0 /10 e / e C rel. responsivity e min e 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.01 0.10 1.00 10.00 100.00 e C ambient dc irradiance (w/m 2 ) 16911 correlation with ambient light sources: 10w/m 2 1.4klx (std.illum.a,t=2855k) 10w/m 2 8.2klx (daylight,t=5900k) ambient, = 950 nm e C threshold irradiance ( mw/m ) e min 2
www.vishay.com 4 document number 82207 rev. 1.2, 31-jan-05 tsop22..iv1 vishay semiconductors figure 7. sensitivity vs. supply voltage disturbances figure 8. sensitivity vs. el ectric field disturbances figure 9. max. envelope duty cycle vs. burstlength 0.0 0.5 1.0 1.5 2.0 0.1 1.0 10.0 100.0 1000.0 v srms C ac voltage on dc supply voltage (mv) 16912 f = f o f = 10 khz e C threshold irradiance ( mw/m ) e min 2 f = 1 khz f = 100 hz e C threshold irradiance ( mw/m ) 0.0 0.4 0.8 1.2 1.6 0.0 0.4 0.8 1.2 2.0 e C field strength of disturbance ( kv/m ) 2.0 94 8147 1.6 e min 2 f(e) = f 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 20 40 60 80 100 120 burst length ( number of cycles / burst ) 16913 f = 38 khz, e e = 2 mw/m 2 max. envelope duty cycle figure 10. sensitivity vs. ambient temperature figure 11. relative spectral sensitivity vs. wavelength figure 12. directivity 0.0 0.1 0.2 0.3 0.4 0.5 0.6 C30C150 153045607590 t amb C ambient temperature ( q c ) 16918 sensitivity in dark ambient e C threshold irradiance ( mw/m ) e min 2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 750 850 950 1050 1150 - wavelength ( nm ) 16919 s( ) - relative spectral sensitivity rel 96 12223p2 0.4 0.2 0 0.2 0.4 0.6 0.6 0.9 0 q 30 q 10 q 20 q 40 q 50 q 60 q 70 q 80 q 1.0 0.8 0.7 d rel C relative transmission distance
tsop22..iv1 document number 82207 rev. 1.2, 31-jan-05 vishay semiconductors www.vishay.com 5 suitable data format the circuit of the tsop22..iv1 is designed in that way that unexpected output pulses due to noise or distur- bance signals are avoided. a bandpass filter, an inte- grator stage and an automatic gain control are used to suppress such disturbances. the distinguishing mark between data signal and dis- turbance signal are carrier frequency, burst length and duty cycle. the data signal s hould fulfill the following conditions: carrier frequency should be close to center fre- quency of the bandpass (e.g. 38 khz). burst length should be 10 cycles/burst or longer. after each burst which is between 10 cycles and 70 cycles a gap time of at least 14 cycles is necessary. for each burst which is longer than 1.0 ms a corre- sponding gap time is necessary at some time in the data stream. this gap time should be at least 4 times longer than the burst. up to 800 short bursts per second can be received continuously. some examples for suitable data format are: nec code (repetitive pulse), ne c code (repetitive data), toshiba micom format, sharp code, rc5 code, rc6 code, r-2000 code, sony code. when a disturbance signal is applied to the tsop22..iv1 it can still rece ive the data signal. how- ever the sensitivity is reduced to that level that no unexpected pulses will occur. some examples for such disturbance signals which are suppressed by the tsop22..iv1 are: dc light (e.g. from tungsten bulb or sunlight) continuous signal at 38 khz or at any other fre- quency signals from fluorescent lamps with electronic bal- last with high or low modulation (see figure 13 or figure 14). figure 13. ir signal from fluores cent lamp with low modulation figure 14. ir signal from fluores cent lamp with high modulation 0 5 10 15 20 time ( ms ) 16920 ir signal ir signal from fluorescent lamp with low modulation 0 5 10 15 20 time ( ms ) 16921 ir signal ir signal from fluorescent lamp with high modulation
www.vishay.com 6 document number 82207 rev. 1.2, 31-jan-05 tsop22..iv1 vishay semiconductors package dimensions in mm 16982
tsop22..iv1 document number 82207 rev. 1.2, 31-jan-05 vishay semiconductors www.vishay.com 7 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
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